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IRGP35B60PDPBF
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Infineon Technologies
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Транзисторы - IGBT - Одинарные
- TO-247-3
- IGBT 600V 60A 308W TO247AC
Date Sheet
Lagernummer 3980
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：14 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：600V
- Number of Elements：1
- Test Conditions：390V, 22A, 3.3 Ω, 15V
- Turn Off Delay Time：110 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Bulk
- Published：2000
- Part Status：Last Time Buy
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Termination：Through Hole
- ECCN Code：EAR99
- Additional Feature：HIGH RELIABILITY, LOW CONDUCTION LOSS
- Voltage - Rated DC：600V
- Max Power Dissipation：308W
- Current Rating：60A
- Element Configuration：Single
- Power Dissipation：308W
- Case Connection：COLLECTOR
- Input Type：Standard
- Turn On Delay Time：26 ns
- Transistor Application：POWER CONTROL
- Rise Time：6ns
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：2.55V
- Max Collector Current：60A
- Reverse Recovery Time：42 ns
- JEDEC-95 Code：TO-247AC
- Turn On Time：34 ns
- Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 35A
- Turn Off Time-Nom (toff)：142 ns
- IGBT Type：NPT
- Gate Charge：160nC
- Current - Collector Pulsed (Icm)：120A
- Td (on/off) @ 25°C：26ns/110ns
- Switching Energy：220μJ (on), 215μJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：5V
- Height：20.7mm
- Length：15.87mm
- Width：5.3086mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 3980
Итого $0.00000
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