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IRGP50B60PDPBF
- Infineon Technologies
- Транзисторы - IGBT - Одинарные
- TO-247-3
- IGBT 600V 75A 370W TO247AC
- Date Sheet
Lagernummer 1500
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:14 Weeks
- Contact Plating:Tin
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Number of Pins:3
- Weight:38.000013g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:600V
- Number of Elements:1
- Test Conditions:390V, 33A, 3.3 Ω, 15V
- Turn Off Delay Time:140 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Bulk
- Published:2004
- Part Status:Last Time Buy
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Additional Feature:HIGH RELIABILITY, LOW CONDUCTION LOSS
- Voltage - Rated DC:600V
- Max Power Dissipation:370W
- Current Rating:75A
- Element Configuration:Single
- Power Dissipation:370W
- Case Connection:COLLECTOR
- Input Type:Standard
- Turn On Delay Time:33 ns
- Transistor Application:POWER CONTROL
- Rise Time:26ns
- Polarity/Channel Type:N-CHANNEL
- Collector Emitter Voltage (VCEO):600V
- Max Collector Current:75A
- Reverse Recovery Time:50 ns
- JEDEC-95 Code:TO-247AC
- Turn On Time:59 ns
- Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 50A
- Max Junction Temperature (Tj):150°C
- Continuous Collector Current:75A
- Turn Off Time-Nom (toff):190 ns
- IGBT Type:NPT
- Gate Charge:240nC
- Current - Collector Pulsed (Icm):150A
- Td (on/off) @ 25°C:34ns/130ns
- Switching Energy:360μJ (on), 380μJ (off)
- Gate-Emitter Voltage-Max:20V
- Gate-Emitter Thr Voltage-Max:5V
- Fall Time-Max (tf):65ns
- Height:24.99mm
- Length:15.87mm
- Width:5.3086mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 1500
Итого $0.00000