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IRGP50B60PD1PBF
- Infineon Technologies
- Транзисторы - IGBT - Одинарные
- TO-247-3
- IGBT 600V 75A 390W TO247AC
- Date Sheet
Lagernummer 5315
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:14 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Number of Pins:3
- Weight:38.000013g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:600V
- Number of Elements:1
- Test Conditions:390V, 33A, 3.3 Ω, 15V
- Turn Off Delay Time:130 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Published:2004
- Part Status:Last Time Buy
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:Through Hole
- ECCN Code:EAR99
- Additional Feature:HIGH RELIABILITY, LOW CONDUCTION LOSS
- Voltage - Rated DC:600V
- Max Power Dissipation:390W
- Current Rating:75A
- Element Configuration:Single
- Power Dissipation:390W
- Case Connection:COLLECTOR
- Input Type:Standard
- Turn On Delay Time:30 ns
- Transistor Application:POWER CONTROL
- Rise Time:10ns
- Polarity/Channel Type:N-CHANNEL
- Collector Emitter Voltage (VCEO):2.85V
- Max Collector Current:75A
- Reverse Recovery Time:42 ns
- JEDEC-95 Code:TO-247AC
- Turn On Time:39 ns
- Vce(on) (Max) @ Vge, Ic:2.85V @ 15V, 50A
- Turn Off Time-Nom (toff):161 ns
- IGBT Type:NPT
- Gate Charge:205nC
- Current - Collector Pulsed (Icm):150A
- Td (on/off) @ 25°C:30ns/130ns
- Switching Energy:255μJ (on), 375μJ (off)
- Gate-Emitter Voltage-Max:20V
- Gate-Emitter Thr Voltage-Max:5V
- Fall Time-Max (tf):20ns
- Height:20.7mm
- Length:15.87mm
- Width:5.3086mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 5315
Итого $0.00000