STGB7NC60HDT4

Name: STMicroelectronics STGB7NC60HDT4
Brand: STMicroelectronics
Rating: 4.6 (8 reviews)

STMicroelectronics
Транзисторы - IGBT - Одинарные
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IGBT 600V 25A 80W D2PAK
Date Sheet

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Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：600V
Number of Elements：1
Test Conditions：390V, 7A, 10 Ω, 15V
Turn Off Delay Time：72 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerMESH™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：600V
Max Power Dissipation：80W
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：14A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STGB7
Pin Count：4
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Power Dissipation：25W
Input Type：Standard
Turn On Delay Time：18.5 ns
Power - Max：80W
Transistor Application：POWER CONTROL
Rise Time：8.5ns
Polarity/Channel Type：N-CHANNEL
Collector Emitter Voltage (VCEO)：600V
Max Collector Current：25A
Reverse Recovery Time：37 ns
Max Breakdown Voltage：600V
Turn On Time：25.5 ns
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
Turn Off Time-Nom (toff)：221 ns
Gate Charge：35nC
Current - Collector Pulsed (Icm)：50A
Td (on/off) @ 25°C：18.5ns/72ns
Switching Energy：95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max：20V
Gate-Emitter Thr Voltage-Max：5.75V
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

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