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MBRT20035
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GeneSiC Semiconductor
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Диоды - Выпрямители - Массивы
- Three Tower
- Schottky Diodes & Rectifiers 35V 200A Schottky Recovery
Date Sheet
Lagernummer 35
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：PRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time：6 Weeks
- Mount：Chassis Mount
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Diode Element Material：SILICON
- Number of Elements：2
- Packaging：Bulk
- Published：2010
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Max Operating Temperature：150°C
- Min Operating Temperature：-40°C
- Applications：POWER
- HTS Code：8541.10.00.80
- Terminal Position：UPPER
- Terminal Form：UNSPECIFIED
- JESD-30 Code：R-PUFM-X3
- Element Configuration：Common Cathode
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type：Schottky
- Current - Reverse Leakage @ Vr：1mA @ 20V
- Voltage - Forward (Vf) (Max) @ If：750mV @ 100A
- Case Connection：ISOLATED
- Forward Current：200A
- Max Reverse Leakage Current：1μA
- Operating Temperature - Junction：-55°C~150°C
- Max Surge Current：1.5kA
- Output Current-Max：100A
- Current - Average Rectified (Io)：200A DC
- Max Reverse Voltage (DC)：35V
- Average Rectified Current：200A
- Number of Phases：1
- Peak Reverse Current：1A
- Max Repetitive Reverse Voltage (Vrrm)：35V
- Diode Configuration：1 Pair Common Cathode
- RoHS Status：RoHS Compliant
Со склада 35
Итого $0.00000
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