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JANTX1N5415US
- Microsemi Corporation
- Диоды - Выпрямители - Одинарные
- SQ-MELF, B
- DIODE GEN PURP 50V 3A B-MELF
- Date Sheet
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Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:IN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time:14 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SQ-MELF, B
- Number of Pins:2
- Diode Element Material:SILICON
- Number of Elements:1
- Packaging:Bulk
- Series:Military, MIL-PRF-19500/411
- Published:1997
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Max Operating Temperature:175°C
- Min Operating Temperature:-65°C
- Applications:FAST RECOVERY POWER
- HTS Code:8541.10.00.80
- Terminal Position:END
- Terminal Form:WRAP AROUND
- Reference Standard:MIL-19500/411L
- Qualification Status:Qualified
- Element Configuration:Single
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Reverse Leakage @ Vr:1μA @ 50V
- Voltage - Forward (Vf) (Max) @ If:1.5V @ 9A
- Case Connection:ISOLATED
- Operating Temperature - Junction:-65°C~175°C
- Output Current-Max:3A
- Max Reverse Voltage (DC):50V
- Average Rectified Current:3A
- Number of Phases:1
- Reverse Recovery Time:150 ns
- Peak Reverse Current:1μA
- Max Repetitive Reverse Voltage (Vrrm):50V
- Peak Non-Repetitive Surge Current:80A
- Radiation Hardening:No
- RoHS Status:Non-RoHS Compliant
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