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JAN1N5622US
- Microsemi Corporation
- Диоды - Выпрямители - Одинарные
- SQ-MELF, A
- DIODE GEN PURP 1KV 1A D5A
- Date Sheet
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Спецификация Часто задаваемые вопросы
- Lifecycle Status:IN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SQ-MELF, A
- Number of Pins:2
- Diode Element Material:SILICON
- Number of Elements:1
- Packaging:Bulk
- Series:Military, MIL-PRF-19500/427
- Published:1997
- JESD-609 Code:e0
- Pbfree Code:no
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Max Operating Temperature:200°C
- Min Operating Temperature:-65°C
- Additional Feature:HIGH RELIABILITY
- HTS Code:8541.10.00.80
- Terminal Position:END
- Terminal Form:WRAP AROUND
- Pin Count:2
- Qualification Status:Qualified
- Element Configuration:Single
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Reverse Leakage @ Vr:500nA @ 1000V
- Voltage - Forward (Vf) (Max) @ If:1.3V @ 3A
- Case Connection:ISOLATED
- Operating Temperature - Junction:-65°C~200°C
- Output Current-Max:1A
- Voltage - DC Reverse (Vr) (Max):1000V
- Max Reverse Voltage (DC):1kV
- Average Rectified Current:1A
- Reverse Recovery Time:2 μs
- Peak Reverse Current:500nA
- Max Repetitive Reverse Voltage (Vrrm):100V
- Peak Non-Repetitive Surge Current:30A
- Radiation Hardening:No
- RoHS Status:Non-RoHS Compliant
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