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FS50R12W2T4BOMA1
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Infineon Technologies
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Транзисторы - Модули IGBT
- Module
- IGBT MOD 1200V 83A 335W
Date Sheet
Lagernummer 57
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：16 Weeks
- Contact Plating：Tin
- Mount：Screw
- Mounting Type：Chassis Mount
- Package / Case：Module
- Number of Pins：18
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：6
- Operating Temperature：-40°C~125°C
- Pbfree Code：no
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：15
- ECCN Code：EAR99
- Max Power Dissipation：335W
- Terminal Position：UPPER
- Terminal Form：UNSPECIFIED
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Pin Count：33
- JESD-30 Code：R-XUFM-X15
- Qualification Status：Not Qualified
- Configuration：Full Bridge Inverter
- Power Dissipation：335W
- Case Connection：ISOLATED
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Input：Standard
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：83A
- Current - Collector Cutoff (Max)：1mA
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Turn On Time：185 ns
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
- Turn Off Time-Nom (toff)：490 ns
- IGBT Type：Trench Field Stop
- NTC Thermistor：Yes
- Input Capacitance (Cies) @ Vce：2.8nF @ 25V
- REACH SVHC：No SVHC
- RoHS Status：ROHS3 Compliant
Со склада 57
Итого $0.00000
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