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MWI225-12E9
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IXYS
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Транзисторы - Модули IGBT
- E+
- IGBT MODULE 1200V 355A 1400W E+
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mount：Chassis Mount
- Mounting Type：Chassis Mount
- Package / Case：E+
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：6
- Operating Temperature：-40°C~125°C TJ
- Packaging：Bulk
- Published：2010
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：17
- Terminal Finish：Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature：UL REGONIZED
- Max Power Dissipation：1.4kW
- Terminal Position：UPPER
- Terminal Form：UNSPECIFIED
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：MWI
- Pin Count：29
- JESD-30 Code：R-XUFM-X17
- Qualification Status：Not Qualified
- Configuration：Three Phase Inverter
- Case Connection：ISOLATED
- Power - Max：1400W
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Input：Standard
- Collector Emitter Voltage (VCEO)：2.5V
- Max Collector Current：355A
- Current - Collector Cutoff (Max)：1mA
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Input Capacitance：14nF
- Turn On Time：350 ns
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 225A
- Turn Off Time-Nom (toff)：800 ns
- IGBT Type：NPT
- NTC Thermistor：Yes
- Input Capacitance (Cies) @ Vce：14nF @ 25V
- RoHS Status：RoHS Compliant
Со склада 0
Итого $0.00000
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