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APT100GT120JRDQ4
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Microsemi Corporation
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Транзисторы - Модули IGBT
- ISOTOP
- IGBT MOD 1200V 123A 570W ISOTOP
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：29 Weeks
- Mount：Chassis Mount, Screw
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Number of Pins：4
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：1
- Operating Temperature：-55°C~150°C TJ
- Series：Thunderbolt IGBT®
- Published：2001
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：4
- ECCN Code：EAR99
- Additional Feature：HIGH RELIABILITY, UL RECOGNIZED
- Max Power Dissipation：570W
- Terminal Position：UPPER
- Terminal Form：UNSPECIFIED
- Pin Count：4
- Configuration：Single
- Case Connection：ISOLATED
- Power - Max：570W
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Input：Standard
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：123A
- Current - Collector Cutoff (Max)：200μA
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Input Capacitance：7.85nF
- Turn On Time：150 ns
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 100A
- Turn Off Time-Nom (toff)：747 ns
- IGBT Type：NPT
- NTC Thermistor：No
- Gate-Emitter Voltage-Max：20V
- Input Capacitance (Cies) @ Vce：7.85nF @ 25V
- VCEsat-Max：3.7 V
- RoHS Status：RoHS Compliant
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