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FF100R12RT4HOSA1
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Infineon Technologies
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Транзисторы - Модули IGBT
- Module
- IGBT Modules IGBT Module w/ IGBT & Diode
Date Sheet
Lagernummer 50
- 1+： $83.65001
- 10+： $78.91510
- 100+： $74.44821
- 500+： $70.23416
- 1000+： $66.25864
Zwischensummenbetrag $83.65001
Спецификация Часто задаваемые вопросы
- Factory Lead Time：16 Weeks
- Mounting Type：Chassis Mount
- Package / Case：Module
- Surface Mount：NO
- Transistor Element Material：SILICON
- Current-Collector (Ic) (Max)：100A
- Number of Elements：2
- Operating Temperature：-40°C~150°C
- Published：2002
- Pbfree Code：no
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：5
- ECCN Code：EAR99
- Terminal Position：UPPER
- Terminal Form：UNSPECIFIED
- Pin Count：7
- JESD-30 Code：R-XUFM-X5
- Configuration：2 Independent
- Element Configuration：Dual
- Case Connection：ISOLATED
- Power - Max：555W
- Transistor Application：POWER CONTROL
- Halogen Free：Not Halogen Free
- Polarity/Channel Type：N-CHANNEL
- Input：Standard
- Current - Collector Cutoff (Max)：1mA
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Turn On Time：185 ns
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 100A
- Turn Off Time-Nom (toff)：490 ns
- IGBT Type：Trench Field Stop
- NTC Thermistor：No
- Input Capacitance (Cies) @ Vce：630nF @ 25V
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
Со склада 50
- 1+： $83.65001
- 10+： $78.91510
- 100+： $74.44821
- 500+： $70.23416
- 1000+： $66.25864
Итого $83.65001
Центр поддержки
услуга покупки
пункты договора
Корпорация Whisyee
Контакты