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FF600R12IE4BOSA1
- Infineon Technologies
- Транзисторы - Модули IGBT
- Module
- IGBT MOD 1200V 600A 3350W
- Date Sheet
Lagernummer 2273
- 1+: $406.75035
- 10+: $383.72675
- 100+: $362.00637
- 500+: $341.51544
- 1000+: $322.18438
Zwischensummenbetrag $406.75035
Спецификация Часто задаваемые вопросы
- Factory Lead Time:14 Weeks
- Package / Case:Module
- Surface Mount:NO
- Mounting Type:Chassis Mount
- Number of Pins:10
- Transistor Element Material:SILICON
- Number of Elements:2
- Current-Collector (Ic) (Max):600A
- Operating Temperature:-40°C~150°C TJ
- Published:2002
- Pbfree Code:no
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:7
- ECCN Code:EAR99
- Terminal Position:UPPER
- Terminal Form:UNSPECIFIED
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Pin Count:11
- JESD-30 Code:R-XUFM-X7
- Qualification Status:Not Qualified
- Configuration:Half Bridge
- Element Configuration:Dual
- Case Connection:ISOLATED
- Power - Max:3350W
- Transistor Application:POWER CONTROL
- Halogen Free:Not Halogen Free
- Polarity/Channel Type:N-CHANNEL
- Input:Standard
- Current - Collector Cutoff (Max):5mA
- Voltage - Collector Emitter Breakdown (Max):1200V
- Power Dissipation-Max (Abs):3350W
- Turn On Time:410 ns
- Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 600A
- Turn Off Time-Nom (toff):1020 ns
- IGBT Type:Trench Field Stop
- NTC Thermistor:Yes
- Gate-Emitter Voltage-Max:20V
- Input Capacitance (Cies) @ Vce:37nF @ 25V
- VCEsat-Max:2.05 V
- RoHS Status:ROHS3 Compliant
- Lead Free:Contains Lead
Со склада 2273
- 1+: $406.75035
- 10+: $383.72675
- 100+: $362.00637
- 500+: $341.51544
- 1000+: $322.18438
Итого $406.75035