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MLD1N06CLT4G
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ON Semiconductor
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Транзисторы - Специального назначения
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET 62V 1A N-Channel
Date Sheet
Lagernummer 9870
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：OBSOLETE (Last Updated: 14 hours ago)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount：YES
- Number of Pins：3
- Number of Elements：1
- Turn Off Delay Time：4 ns
- Packaging：Tape & Reel (TR)
- Series：SMARTDISCRETES™
- Published：2006
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Resistance：750MOhm
- Terminal Finish：Tin (Sn)
- Max Operating Temperature：150°C
- Min Operating Temperature：-55°C
- Applications：General Purpose
- Additional Feature：LOGIC LEVEL COMPATIBLE
- Voltage - Rated DC：62V
- Max Power Dissipation：40W
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：1A
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MLD1N06C
- Pin Count：3
- JESD-30 Code：R-PSSO-G2
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：40W
- Turn On Delay Time：1.2 ns
- Transistor Application：SWITCHING
- Halogen Free：Halogen Free
- Rise Time：4ns
- Drain to Source Voltage (Vdss)：62V
- Fall Time (Typ)：3 ns
- Transistor Type：NPN, N-Channel Gate-Drain, Source Clamp
- Continuous Drain Current (ID)：1A
- Threshold Voltage：1.5V
- Gate to Source Voltage (Vgs)：10V
- Drain Current-Max (Abs) (ID)：1A
- Drain to Source Breakdown Voltage：59V
- Avalanche Energy Rating (Eas)：80 mJ
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance：750mOhm
- Nominal Vgs：1.5 V
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
Со склада 9870
Итого $0.00000
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