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2N5179 PBFREE

Lagernummer 686

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Factory Lead Time:24 Weeks
  • Mounting Type:Through Hole
  • Package / Case:TO-206AF, TO-72-4 Metal Can
  • Surface Mount:NO
  • Transistor Element Material:SILICON
  • Current-Collector (Ic) (Max):50mA
  • Number of Elements:1
  • Operating Temperature:-65°C~200°C TJ
  • Packaging:Bulk
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:4
  • Terminal Finish:Matte Tin (Sn) - with Nickel (Ni) barrier
  • Terminal Position:BOTTOM
  • Terminal Form:WIRE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • JESD-30 Code:O-MBCY-W4
  • Configuration:SINGLE
  • Power - Max:200mW
  • Transistor Application:AMPLIFIER
  • Polarity/Channel Type:NPN
  • Transistor Type:NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 3mA 1V
  • Gain:15dB
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Transition Frequency:900MHz
  • Frequency - Transition:2GHz
  • Power Dissipation-Max (Abs):0.3W
  • VCEsat-Max:0.4 V
  • Highest Frequency Band:ULTRA HIGH FREQUENCY B
  • Collector-Base Capacitance-Max:1pF
  • Noise Figure (dB Typ @ f):4.5dB @ 200MHz
  • RoHS Status:ROHS3 Compliant

Со склада 686

Итого $0.00000