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2SC5084-O(TE85L,F)
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Toshiba Semiconductor and Storage
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Транзисторы - Биполярные (BJT) - РЧ
- TO-236-3, SC-59, SOT-23-3
- Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V
Date Sheet
Lagernummer 1350
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：12 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：12V
- Number of Elements：1
- hFEMin：80
- Operating Temperature：125°C TJ
- Packaging：Cut Tape (CT)
- Published：2014
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Additional Feature：LOW NOISE
- Max Power Dissipation：150mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Reach Compliance Code：unknown
- JESD-30 Code：R-PDSO-G3
- Element Configuration：Single
- Power - Max：150mW
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：7 GHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：12V
- Max Collector Current：80mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 20mA 10V
- Gain：11dB
- Transition Frequency：7000MHz
- Max Breakdown Voltage：12V
- Collector Base Voltage (VCBO)：20V
- Emitter Base Voltage (VEBO)：3V
- Highest Frequency Band：ULTRA HIGH FREQUENCY B
- Collector-Base Capacitance-Max：1.15pF
- Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
- RoHS Status：RoHS Compliant
Со склада 1350
Итого $0.00000
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