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BLP10H603Z
- Ampleon USA Inc.
- Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- 12-VDFN Exposed Pad
- RF FET LDMOS 104V 22DB 12VDFN
- Date Sheet
Lagernummer 8121
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:13 Weeks
- Surface Mount:YES
- Package / Case:12-VDFN Exposed Pad
- Transistor Element Material:SILICON
- Voltage Rated:104V
- Number of Elements:1
- Packaging:Tape & Reel (TR)
- Published:2011
- Part Status:Active
- Moisture Sensitivity Level (MSL):3 (168 Hours)
- Number of Terminations:12
- ECCN Code:EAR99
- Terminal Position:DUAL
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- Frequency:860MHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Reference Standard:IEC-60134
- JESD-30 Code:R-PDSO-N12
- Configuration:SINGLE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:SOURCE
- Current - Test:15mA
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:N-CHANNEL
- Transistor Type:LDMOS
- JEDEC-95 Code:MO-229
- Gain:22.8dB
- DS Breakdown Voltage-Min:104V
- Power - Output:2.5W
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Voltage - Test:50V
- RoHS Status:ROHS3 Compliant
Со склада 8121
Итого $0.00000