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PD85035S-E
- STMicroelectronics
- Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- PowerSO-10 Exposed Bottom Pad
- FET RF 40V 870MHZ
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:25 Weeks
- Mount:Surface Mount
- Package / Case:PowerSO-10 Exposed Bottom Pad
- Number of Pins:3
- Number of Elements:1
- Packaging:Tube
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):3 (168 Hours)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn)
- Max Operating Temperature:150°C
- Min Operating Temperature:-65°C
- Max Power Dissipation:95W
- Terminal Position:DUAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):250
- Current Rating:8A
- Frequency:870MHz
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:PD85035
- Pin Count:10
- JESD-30 Code:R-PDSO-F2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:95W
- Case Connection:SOURCE
- Current - Test:350mA
- Transistor Application:AMPLIFIER
- Drain to Source Voltage (Vdss):40V
- Polarity/Channel Type:N-CHANNEL
- Transistor Type:LDMOS
- Continuous Drain Current (ID):8A
- Gate to Source Voltage (Vgs):15V
- Gain:17dB
- Max Output Power:40W
- Drain Current-Max (Abs) (ID):8A
- Drain to Source Breakdown Voltage:40V
- Power - Output:15W
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Voltage - Test:13.6V
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
Со склада 0
Итого $0.00000