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PD55003-E
- STMicroelectronics
- Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- PowerSO-10 Exposed Bottom Pad
- FET RF 40V 500MHZ PWRSO10
- Date Sheet
Lagernummer 4438
- 1+: $9.05752
- 10+: $8.54483
- 100+: $8.06116
- 500+: $7.60487
- 1000+: $7.17441
Zwischensummenbetrag $9.05752
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:25 Weeks
- Mount:Surface Mount
- Package / Case:PowerSO-10 Exposed Bottom Pad
- Number of Pins:3
- Number of Elements:1
- Packaging:Tube
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):3 (168 Hours)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn) - annealed
- Max Operating Temperature:165°C
- Min Operating Temperature:-65°C
- Additional Feature:HIGH RELIABILITY
- Voltage - Rated DC:40V
- Max Power Dissipation:31.7W
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):250
- Current Rating:2.5A
- Frequency:500MHz
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:PD55003
- Pin Count:10
- JESD-30 Code:R-PDSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:31.7W
- Case Connection:SOURCE
- Current - Test:50mA
- Transistor Application:AMPLIFIER
- Drain to Source Voltage (Vdss):40V
- Polarity/Channel Type:N-CHANNEL
- Transistor Type:LDMOS
- Continuous Drain Current (ID):2.5A
- Gate to Source Voltage (Vgs):20V
- Max Output Power:3W
- Drain to Source Breakdown Voltage:40V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Voltage - Test:12.5V
- Power Gain:17dB
- Height:3.5mm
- Length:7.5mm
- Width:9.4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 4438
- 1+: $9.05752
- 10+: $8.54483
- 100+: $8.06116
- 500+: $7.60487
- 1000+: $7.17441
Итого $9.05752