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PD20015-E
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STMicroelectronics
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Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- TRANS RF PWR N-CH POWERSO-10RF
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：25 Weeks
- Mount：Surface Mount
- Package / Case：PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Number of Pins：3
- Number of Elements：1
- Packaging：Tube
- Part Status：Active
- Moisture Sensitivity Level (MSL)：3 (168 Hours)
- Number of Terminations：2
- ECCN Code：EAR99
- Max Operating Temperature：165°C
- Min Operating Temperature：-65°C
- Additional Feature：HIGH RELIABILITY
- Max Power Dissipation：79W
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Current Rating：7A
- Frequency：2GHz
- Base Part Number：PD20015
- Pin Count：10
- JESD-30 Code：R-PDFM-G2
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：79W
- Case Connection：SOURCE
- Current - Test：350mA
- Transistor Application：AMPLIFIER
- Drain to Source Voltage (Vdss)：40V
- Polarity/Channel Type：N-CHANNEL
- Transistor Type：LDMOS
- Continuous Drain Current (ID)：7A
- Gate to Source Voltage (Vgs)：15V
- Gain：11dB
- Max Output Power：23W
- Drain Current-Max (Abs) (ID)：7A
- Drain to Source Breakdown Voltage：40V
- Power - Output：15W
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Voltage - Test：13.6V
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
Со склада 0
Итого $0.00000
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