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MMBFJ309LT1G
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ON Semiconductor
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Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- TO-236-3, SC-59, SOT-23-3
- ON SEMICONDUCTOR - MMBFJ309LT1G - JFET Transistor, JFET, -25 V, 12 mA, 30 mA, -4 V, SOT-23, JFET
Date Sheet
Lagernummer 849460
- 1+： $0.34179
- 10+： $0.32245
- 100+： $0.30419
- 500+： $0.28698
- 1000+： $0.27073
Zwischensummenbetrag $0.34179
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time：8 Weeks
- Contact Plating：Tin
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Weight：1.437803g
- Breakdown Voltage / V：-25V
- Number of Elements：1
- Usage Level：Military grade
- Packaging：Tape & Reel (TR)
- Published：2006
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Max Operating Temperature：150°C
- Min Operating Temperature：-55°C
- Voltage - Rated DC：-25V
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：30mA
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MMBFJ309
- Pin Count：3
- Element Configuration：Single
- Operating Mode：DEPLETION MODE
- Power Dissipation：225mW
- Transistor Application：AMPLIFIER
- Halogen Free：Halogen Free
- Drain to Source Voltage (Vdss)：25V
- Transistor Type：N-Channel JFET
- Continuous Drain Current (ID)：10mA
- Gate to Source Voltage (Vgs)：25V
- Input Capacitance：5pF
- FET Technology：JUNCTION
- Highest Frequency Band：ULTRA HIGH FREQUENCY B
- Height：1.016mm
- Length：3.0226mm
- Width：1.397mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 849460
- 1+： $0.34179
- 10+： $0.32245
- 100+： $0.30419
- 500+： $0.28698
- 1000+： $0.27073
Итого $0.34179
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