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BFR35APE6327HTSA1
- Infineon Technologies
- Транзисторы - Биполярные (BJT) - РЧ
- TO-236-3, SC-59, SOT-23-3
- RF TRANS NPN 15V 5GHZ SOT23-3
- Date Sheet
Lagernummer 1366
- 1+: $0.16409
- 10+: $0.15480
- 100+: $0.14604
- 500+: $0.13777
- 1000+: $0.12997
Zwischensummenbetrag $0.16409
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:15V
- Number of Elements:1
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2001
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:15V
- Max Power Dissipation:280mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:45mA
- Frequency:5GHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Element Configuration:Single
- Power Dissipation:280mW
- Transistor Application:AMPLIFIER
- Halogen Free:Not Halogen Free
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):15V
- Max Collector Current:45mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 15mA 8V
- Gain:10.5dB ~ 16dB
- Transition Frequency:5000MHz
- Collector Base Voltage (VCBO):20V
- Emitter Base Voltage (VEBO):2.5V
- Collector-Base Capacitance-Max:0.55pF
- Noise Figure (dB Typ @ f):1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
- Height:1mm
- Length:2.9mm
- Width:1.3mm
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 1366
- 1+: $0.16409
- 10+: $0.15480
- 100+: $0.14604
- 500+: $0.13777
- 1000+: $0.12997
Итого $0.16409