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BC846BLT1G
- ON Semiconductor
- Транзисторы - Биполярные (BJT) - Одинарные
- TO-236-3, SC-59, SOT-23-3
- TRANS NPN 65V 0.1A SOT23
- Date Sheet
Lagernummer 52
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 6 days ago)
- Factory Lead Time:4 Weeks
- Contact Plating:Tin
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Surface Mount:YES
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:65V
- Number of Elements:1
- hFEMin:200
- Operating Temperature:-55°C~150°C TJ
- Packaging:Cut Tape (CT)
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Type:General Purpose
- Voltage - Rated DC:65V
- Max Power Dissipation:300mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:100mA
- Frequency:100MHz
- Time@Peak Reflow Temperature-Max (s):40
- Pin Count:3
- Element Configuration:Single
- Power Dissipation:300mW
- Transistor Application:SWITCHING
- Halogen Free:Halogen Free
- Gain Bandwidth Product:100MHz
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):65V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA 5V
- Current - Collector Cutoff (Max):15nA ICBO
- Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
- Transition Frequency:100MHz
- Max Breakdown Voltage:65V
- Collector Base Voltage (VCBO):80V
- Emitter Base Voltage (VEBO):6V
- Noise Figure:10 dB
- Height:940μm
- Length:2.9mm
- Width:1.3mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 52
Итого $0.00000