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MJD31CT4G
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TRANS NPN 100V 3A DPAK
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
- Factory Lead Time：8 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount：YES
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：100V
- Number of Elements：1
- hFEMin：25
- Operating Temperature：-65°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2005
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Voltage - Rated DC：100V
- Max Power Dissipation：1.56W
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：3A
- Frequency：3MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MJD31
- Pin Count：3
- JESD-30 Code：R-PSSO-G2
- Element Configuration：Single
- Power Dissipation：1.56W
- Case Connection：COLLECTOR
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：3MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：100V
- Max Collector Current：3A
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 3A 4V
- Current - Collector Cutoff (Max)：50μA
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 375mA, 3A
- Transition Frequency：3MHz
- Max Breakdown Voltage：100V
- Collector Base Voltage (VCBO)：100V
- Emitter Base Voltage (VEBO)：5V
- Height：2.38mm
- Length：6.73mm
- Width：6.22mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 0
Итого $0.00000
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