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FMMT593TA
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Diodes Incorporated
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-236-3, SC-59, SOT-23-3
- TRANS PNP 100V 1A SOT23-3
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：15 Weeks
- Contact Plating：Tin
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Number of Pins：3
- Weight：7.994566mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：-100V
- Number of Elements：1
- hFEMin：100
- Operating Temperature：-55°C~150°C TJ
- Packaging：Cut Tape (CT)
- Published：1997
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-100V
- Max Power Dissipation：500mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：-1A
- Frequency：50MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：FMMT593
- Voltage：100V
- Element Configuration：Single
- Current：1A
- Power Dissipation：500mW
- Transistor Application：SWITCHING
- Gain Bandwidth Product：50MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：-100V
- Max Collector Current：-1A
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 500mA 5V
- Current - Collector Cutoff (Max)：100nA
- Vce Saturation (Max) @ Ib, Ic：300mV @ 50mA, 500mA
- Transition Frequency：50MHz
- Max Breakdown Voltage：100V
- Collector Base Voltage (VCBO)：-120V
- Emitter Base Voltage (VEBO)：-7V
- Max Junction Temperature (Tj)：150°C
- Continuous Collector Current：-1A
- Height：1.1mm
- Length：3mm
- Width：1.4mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 0
Итого $0.00000
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