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FZT855TA
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Diodes Incorporated
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-261-4, TO-261AA
- Trans GP BJT NPN 150V 5A 4-Pin(3+Tab) SOT-223 T/R
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：15 Weeks
- Contact Plating：Tin
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Number of Pins：3
- Weight：7.994566mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：150V
- Number of Elements：1
- Operating Temperature：-55°C~150°C TJ
- Packaging：Cut Tape (CT)
- Published：2006
- JESD-609 Code：e3
- Pbfree Code：no
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：4
- ECCN Code：EAR99
- Voltage - Rated DC：150V
- Max Power Dissipation：3W
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：5A
- Frequency：90MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：FZT855
- JESD-30 Code：R-PDSO-G4
- Element Configuration：Single
- Power Dissipation：3W
- Case Connection：COLLECTOR
- Transistor Application：SWITCHING
- Gain Bandwidth Product：90MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：150V
- Max Collector Current：5A
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1A 5V
- Current - Collector Cutoff (Max)：50nA ICBO
- Vce Saturation (Max) @ Ib, Ic：355mV @ 500mA, 5A
- Transition Frequency：90MHz
- Max Breakdown Voltage：150V
- Collector Base Voltage (VCBO)：250V
- Emitter Base Voltage (VEBO)：6V
- Continuous Collector Current：5A
- Height：1.65mm
- Length：6.7mm
- Width：3.7mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 0
Итого $0.00000
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