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PBSS4350Z,135
- Nexperia USA Inc.
- Транзисторы - Биполярные (BJT) - Одинарные
- TO-261-4, TO-261AA
- NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL
- Date Sheet
Lagernummer 33395
- 1+: $0.21215
- 10+: $0.20015
- 100+: $0.18882
- 500+: $0.17813
- 1000+: $0.16805
Zwischensummenbetrag $0.21215
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-261-4, TO-261AA
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:1
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2001
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:4
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Max Power Dissipation:2W
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Frequency:100MHz
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:PBSS4350
- Pin Count:4
- JESD-30 Code:R-PDSO-G4
- Element Configuration:Single
- Power Dissipation:2W
- Case Connection:COLLECTOR
- Transistor Application:SWITCHING
- Gain Bandwidth Product:100MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:3A
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2A 2V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:290mV @ 200mA, 2A
- Transition Frequency:100MHz
- Max Breakdown Voltage:50V
- Collector Base Voltage (VCBO):60V
- Emitter Base Voltage (VEBO):6V
- Height:1.7mm
- Length:6.7mm
- Width:3.7mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 33395
- 1+: $0.21215
- 10+: $0.20015
- 100+: $0.18882
- 500+: $0.17813
- 1000+: $0.16805
Итого $0.21215