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MTB50N06V
- ON Semiconductor
- Неклассифицированные
- -
- MOSFET Transistor, N-Channel, TO-263AB
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:YES
- Number of Terminals:2
- Transistor Element Material:SILICON
- Package Shape:RECTANGULAR
- Manufacturer:Motorola Semiconductor Products
- Number of Elements:1
- Part Life Cycle Code:Transferred
- Ihs Manufacturer:MOTOROLA INC
- Risk Rank:8.71
- Drain Current-Max (ID):42 A
- Manufacturer Part Number:MTB50N06V
- Rohs Code:No
- Operating Temperature-Max:175 °C
- Package Body Material:PLASTIC/EPOXY
- Package Style:SMALL OUTLINE
- Package Description:SMALL OUTLINE, R-PSSO-G2
- JESD-609 Code:e0
- Terminal Finish:Tin/Lead (Sn/Pb)
- Subcategory:FET General Purpose Power
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Reach Compliance Code:unknown
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- Drain Current-Max (Abs) (ID):42 A
- Drain-source On Resistance-Max:0.028 Ω
- Pulsed Drain Current-Max (IDM):147 A
- DS Breakdown Voltage-Min:60 V
- Avalanche Energy Rating (Eas):400 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):125 W
Со склада 0
Итого $0.00000