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MTB50N06V

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Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Surface Mount:YES
  • Number of Terminals:2
  • Transistor Element Material:SILICON
  • Package Shape:RECTANGULAR
  • Manufacturer:Motorola Semiconductor Products
  • Number of Elements:1
  • Part Life Cycle Code:Transferred
  • Ihs Manufacturer:MOTOROLA INC
  • Risk Rank:8.71
  • Drain Current-Max (ID):42 A
  • Manufacturer Part Number:MTB50N06V
  • Rohs Code:No
  • Operating Temperature-Max:175 °C
  • Package Body Material:PLASTIC/EPOXY
  • Package Style:SMALL OUTLINE
  • Package Description:SMALL OUTLINE, R-PSSO-G2
  • JESD-609 Code:e0
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • Subcategory:FET General Purpose Power
  • Terminal Position:SINGLE
  • Terminal Form:GULL WING
  • Reach Compliance Code:unknown
  • JESD-30 Code:R-PSSO-G2
  • Qualification Status:Not Qualified
  • Configuration:SINGLE WITH BUILT-IN DIODE
  • Operating Mode:ENHANCEMENT MODE
  • Case Connection:DRAIN
  • Transistor Application:SWITCHING
  • Polarity/Channel Type:N-CHANNEL
  • Drain Current-Max (Abs) (ID):42 A
  • Drain-source On Resistance-Max:0.028 Ω
  • Pulsed Drain Current-Max (IDM):147 A
  • DS Breakdown Voltage-Min:60 V
  • Avalanche Energy Rating (Eas):400 mJ
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs):125 W

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