BSC027N04LSGATMA1

Name: Infineon Technologies BSC027N04LSGATMA1
Brand: Infineon Technologies
Rating: 5 (18 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-PowerTDFN
Trans MOSFET N-CH 40V 24A 8-Pin TDSON EP
Date Sheet

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Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：24A Ta 100A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 83W Tc
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：OptiMOS™
Published：2009
JESD-609 Code：e3
Pbfree Code：no
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Additional Feature：LOGIC LEVEL COMPATIBLE
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Pin Count：8
JESD-30 Code：R-PDSO-F5
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：83W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 49μA
Halogen Free：Halogen Free
Input Capacitance (Ciss) (Max) @ Vds：6800pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：85nC @ 10V
Rise Time：5.6ns
Vgs (Max)：±20V
Continuous Drain Current (ID)：100A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Max Dual Supply Voltage：40V
Drain Current-Max (Abs) (ID)：24A
Pulsed Drain Current-Max (IDM)：400A
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead

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