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HGT1S12N60C3S
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：2
- Transistor Element Material：SILICON
- Package Description：SMALL OUTLINE, R-PSSO-G2
- Package Style：SMALL OUTLINE
- Package Body Material：PLASTIC/EPOXY
- Turn-on Time-Nom (ton)：14 ns
- Turn-off Time-Nom (toff)：270 ns
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：150 °C
- Rohs Code：No
- Manufacturer Part Number：HGT1S12N60C3S
- Package Shape：RECTANGULAR
- Manufacturer：Harris Semiconductor
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：HARRIS SEMICONDUCTOR
- Turn-off Time-Max (toff)：400 ns
- Risk Rank：5.01
- JESD-609 Code：e0
- Terminal Finish：Tin/Lead (Sn/Pb)
- Additional Feature：LOW CONDUCTION LOSS
- Subcategory：Insulated Gate BIP Transistors
- Terminal Position：SINGLE
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：unknown
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Configuration：SINGLE
- Case Connection：COLLECTOR
- Transistor Application：MOTOR CONTROL
- Polarity/Channel Type：N-CHANNEL
- JEDEC-95 Code：TO-263AB
- Power Dissipation-Max (Abs)：104 W
- Collector Current-Max (IC)：24 A
- Collector-Emitter Voltage-Max：600 V
- Gate-Emitter Voltage-Max：20 V
- VCEsat-Max：2 V
- Gate-Emitter Thr Voltage-Max：6 V
- Power Dissipation Ambient-Max：104 W
- Fall Time-Max (tf)：275 ns
Со склада 0
Итого $0.00000
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