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L2N7002LT1G
- Leshan
- Неклассифицированные
- -
- Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R (Alt: L2N7002LT1G)
- Date Sheet
Lagernummer 282000
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:YES
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package Description:SMALL OUTLINE, R-PDSO-G3
- Package Style:SMALL OUTLINE
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:150 °C
- Rohs Code:Yes
- Manufacturer Part Number:L2N7002LT1G
- Package Shape:RECTANGULAR
- Manufacturer:LRC Leshan Radio Co Ltd
- Number of Elements:1
- Part Life Cycle Code:Contact Manufacturer
- Ihs Manufacturer:LESHAN RADIO CO LTD
- Risk Rank:4.81
- Drain Current-Max (ID):0.115 A
- ECCN Code:EAR99
- Subcategory:FET General Purpose Power
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- JESD-30 Code:R-PDSO-G3
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-236AB
- Drain Current-Max (Abs) (ID):0.075 A
- Drain-source On Resistance-Max:7.5 Ω
- DS Breakdown Voltage-Min:60 V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):0.3 W
- Feedback Cap-Max (Crss):5 pF
Со склада 282000
Итого $0.00000