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Lagernummer 0

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  • Factory Lead Time:12 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:75A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):300W Tc
  • Turn Off Delay Time:130 ns
  • Operating Temperature:-55°C~175°C TJ
  • Packaging:Tube
  • Series:HEXFET®
  • Published:2003
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • Termination:Through Hole
  • ECCN Code:EAR99
  • Resistance:2.3Ohm
  • Terminal Finish:Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature:AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Voltage - Rated DC:40V
  • Current Rating:75A
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:330W
  • Case Connection:DRAIN
  • Turn On Delay Time:13 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:2.3m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds:6450pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:240nC @ 10V
  • Rise Time:120ns
  • Vgs (Max):±20V
  • Fall Time (Typ):130 ns
  • Continuous Drain Current (ID):270A
  • Threshold Voltage:4V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):20V
  • Drain to Source Breakdown Voltage:40V
  • Dual Supply Voltage:40V
  • Avalanche Energy Rating (Eas):540 mJ
  • Recovery Time:84 ns
  • Nominal Vgs:4 V
  • Height:9.017mm
  • Length:10.6426mm
  • Width:4.826mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

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