Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные IRF2804PBF
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IRF2804PBF
- Infineon Technologies
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- TO-220-3
- Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:12 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:75A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):300W Tc
- Turn Off Delay Time:130 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tube
- Series:HEXFET®
- Published:2003
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:Through Hole
- ECCN Code:EAR99
- Resistance:2.3Ohm
- Terminal Finish:Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature:AVALANCHE RATED, ULTRA LOW RESISTANCE
- Voltage - Rated DC:40V
- Current Rating:75A
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:330W
- Case Connection:DRAIN
- Turn On Delay Time:13 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:2.3m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:6450pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:240nC @ 10V
- Rise Time:120ns
- Vgs (Max):±20V
- Fall Time (Typ):130 ns
- Continuous Drain Current (ID):270A
- Threshold Voltage:4V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:40V
- Dual Supply Voltage:40V
- Avalanche Energy Rating (Eas):540 mJ
- Recovery Time:84 ns
- Nominal Vgs:4 V
- Height:9.017mm
- Length:10.6426mm
- Width:4.826mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
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Итого $0.00000