AUIRFR5505TRL

Name: Infineon Technologies AUIRFR5505TRL
Brand: Infineon Technologies
Rating: 4.8 (5 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET P-CH 55V 18A DPAK
Date Sheet

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Спецификация Часто задаваемые вопросы

Factory Lead Time：13 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：18A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：57W Tc
Turn Off Delay Time：20 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：HEXFET®
Published：2014
JESD-609 Code：e3
Part Status：Discontinued
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature：AVALANCHE RATED, HIGH RELIABILITY
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：57W
Case Connection：DRAIN
Turn On Delay Time：12 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：110m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
Rise Time：28ns
Vgs (Max)：±20V
Fall Time (Typ)：16 ns
Continuous Drain Current (ID)：18A
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.11Ohm
Drain to Source Breakdown Voltage：55V
Pulsed Drain Current-Max (IDM)：64A
Avalanche Energy Rating (Eas)：150 mJ
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

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