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SI4920DY
- Vishay
- Транзисторы - Специального назначения
- -
- Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:Obsolete (Last Updated: 5 months ago)
- Mount:Surface Mount
- Number of Pins:8
- Weight:186.993455 mg
- Number of Terminals:8
- Case/Package:SO
- Number of Elements:2
- RoHS:Non-Compliant
- Turn Off Delay Time:60 ns
- Resistance:35 mΩ
- Max Operating Temperature:150 °C
- Min Operating Temperature:-55 °C
- Max Power Dissipation:2 W
- Number of Channels:2
- Element Configuration:Dual
- Power Dissipation:2 W
- Turn On Delay Time:12 ns
- Rise Time:10 ns
- Drain to Source Voltage (Vdss):30 V
- Continuous Drain Current (ID):6.9 A
- Gate to Source Voltage (Vgs):20 V
- Drain to Source Breakdown Voltage:30 V
- Dual Supply Voltage:30 V
- Drain to Source Resistance:25 mΩ
- Nominal Vgs:1 V
- Min Breakdown Voltage:30 V
- Height:1.55 mm
- Length:5 mm
- Width:4 mm
- REACH SVHC:Yes
Со склада 0
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