Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные PUMH10,115
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PUMH10,115
- Nexperia USA Inc.
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- 6-TSSOP, SC-88, SOT-363
- TRANS 2NPN PREBIAS 0.3W 6TSSOP
- Date Sheet
Lagernummer 8674
- 1+: $0.19505
- 10+: $0.18401
- 100+: $0.17360
- 500+: $0.16377
- 1000+: $0.15450
Zwischensummenbetrag $0.19505
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Surface Mount:YES
- Number of Pins:6
- Transistor Element Material:SILICON
- Number of Elements:2
- hFEMin:100
- Packaging:Tape & Reel (TR)
- Published:2011
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- HTS Code:8541.21.00.95
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:P*MH10
- Pin Count:6
- Qualification Status:Not Qualified
- Polarity:NPN
- Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power Dissipation:200mW
- Power - Max:300mW
- Transistor Application:SWITCHING
- Transistor Type:2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA 5V
- Current - Collector Cutoff (Max):1μA
- Vce Saturation (Max) @ Ib, Ic:100mV @ 250μA, 5mA
- Collector Base Voltage (VCBO):50V
- Emitter Base Voltage (VEBO):5V
- Max Junction Temperature (Tj):150°C
- Resistor - Base (R1):2.2k Ω
- Resistor - Emitter Base (R2):47k Ω
- Ambient Temperature Range High:150°C
- Height:1.1mm
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
Со склада 8674
- 1+: $0.19505
- 10+: $0.18401
- 100+: $0.17360
- 500+: $0.16377
- 1000+: $0.15450
Итого $0.19505