MUN5111DW1T1G

Name: ON Semiconductor MUN5111DW1T1G
Brand: ON Semiconductor
Rating: 4.6 (12 reviews)

ON Semiconductor
Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
6-TSSOP, SC-88, SOT-363
TRANS 2PNP PREBIAS 0.25W SOT363
Date Sheet

Lagernummer 11106

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：8 Weeks
Lifecycle Status：ACTIVE (Last Updated: 4 hours ago)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Surface Mount：YES
Contact Plating：Tin
Number of Pins：6
Number of Elements：2
hFEMin：35
Collector-Emitter Breakdown Voltage：50V
Packaging：Tape & Reel (TR)
Published：2009
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Max Operating Temperature：150°C
Min Operating Temperature：-55°C
Additional Feature：BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC：-50V
Max Power Dissipation：250mW
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-100mA
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MUN51**DW1T
Pin Count：6
Max Output Current：100mA
Operating Supply Voltage：50V
Polarity：PNP
Element Configuration：Dual
Power Dissipation：250mW
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)：50V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA 10V
Current - Collector Cutoff (Max)：500nA
Vce Saturation (Max) @ Ib, Ic：250mV @ 300μA, 10mA
Max Breakdown Voltage：50V
Resistor - Base (R1)：10k Ω
Continuous Collector Current：-100mA
Resistor - Emitter Base (R2)：10k Ω
Width：1.25mm
Length：2mm
Height：900μm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 11106

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