Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные UMA5NTR
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UMA5NTR
- ROHM Semiconductor
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- 5-TSSOP, SC-70-5, SOT-353
- TRANS PREBIAS DUAL PNP UMT5
- Date Sheet
Lagernummer 382
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:13 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:5-TSSOP, SC-70-5, SOT-353
- Number of Pins:5
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:2
- hFEMin:80
- Packaging:Tape & Reel (TR)
- Published:2004
- JESD-609 Code:e2
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Terminal Finish:Tin/Copper (Sn/Cu)
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT IN BIAS RESISTOR RATIO 21
- Voltage - Rated DC:-50V
- Max Power Dissipation:150mW
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:-100mA
- Time@Peak Reflow Temperature-Max (s):10
- Base Part Number:MA5
- Pin Count:5
- Polarity:PNP
- Element Configuration:Dual
- Power Dissipation:150mW
- Transistor Application:SWITCHING
- Transistor Type:2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):-50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA 5V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250μA, 5mA
- Transition Frequency:250MHz
- Max Breakdown Voltage:50V
- Frequency - Transition:250MHz
- Emitter Base Voltage (VEBO):-5V
- Resistor - Base (R1):2.2k Ω
- Continuous Collector Current:-100mA
- Resistor - Emitter Base (R2):47k Ω
- VCEsat-Max:0.3 V
- Height:900μm
- Length:2.1mm
- Width:1.35mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 382
Итого $0.00000