MMUN2211LT1G

Name: ON Semiconductor MMUN2211LT1G
Brand: ON Semiconductor
Rating: 4.6 (10 reviews)

ON Semiconductor
Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
TO-236-3, SC-59, SOT-23-3
TRANS PREBIAS NPN 246MW SOT23-3
Date Sheet

Lagernummer 1480

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：4 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Surface Mount：YES
Number of Pins：3
Weight：1.437803g
Collector-Emitter Breakdown Voltage：50V
Number of Elements：1
hFEMin：35
Packaging：Tape & Reel (TR)
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Max Operating Temperature：150°C
Min Operating Temperature：-55°C
Additional Feature：BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC：50V
Max Power Dissipation：246mW
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：100mA
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MMUN22**L
Pin Count：3
Max Output Current：100mA
Operating Supply Voltage：50V
Polarity：NPN
Element Configuration：Single
Power Dissipation：246mW
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：NPN - Pre-Biased
Collector Emitter Voltage (VCEO)：50V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA 10V
Current - Collector Cutoff (Max)：500nA
Vce Saturation (Max) @ Ib, Ic：250mV @ 300μA, 10mA
Max Breakdown Voltage：50V
Resistor - Base (R1)：10 k Ω
Continuous Collector Current：100mA
Resistor - Emitter Base (R2)：10 k Ω
Height：940μm
Length：2.9mm
Width：1.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 1480

Итого $0.00000