Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные DTC143EUAT106
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DTC143EUAT106
- ROHM Semiconductor
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- SC-70, SOT-323
- TRANS PREBIAS NPN 200MW UMT3
- Date Sheet
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Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:10 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-70, SOT-323
- Number of Pins:3
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:1
- hFEMin:30
- Packaging:Tape & Reel (TR)
- Published:2006
- JESD-609 Code:e1
- Pbfree Code:yes
- Part Status:Not For New Designs
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:SMD/SMT
- ECCN Code:EAR99
- Terminal Finish:Tin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code:8541.21.00.75
- Voltage - Rated DC:50V
- Max Power Dissipation:200mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:100mA
- Time@Peak Reflow Temperature-Max (s):10
- Base Part Number:DTC143
- Pin Count:3
- Max Output Current:100mA
- Operating Supply Voltage:50V
- Polarity:NPN
- Element Configuration:Single
- Power Dissipation:200mW
- Transistor Application:SWITCHING
- Transistor Type:NPN - Pre-Biased
- Collector Emitter Voltage (VCEO):300mV
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA 5V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:300mV @ 500μA, 10mA
- Transition Frequency:250MHz
- Max Breakdown Voltage:50V
- Frequency - Transition:250MHz
- Resistor - Base (R1):4.7 k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):4.7 k Ω
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
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