BCR135E6327HTSA1

Name: Infineon Technologies BCR135E6327HTSA1
Brand: Infineon Technologies
Price: 0.1736595 USD
Availability: InStock
Rating: 4.7 (14 reviews)

Infineon Technologies
Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
TO-236-3, SC-59, SOT-23-3
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R
Date Sheet

Lagernummer 12397

1+： $0.17366
10+： $0.16383
100+： $0.15456
500+： $0.14581
1000+： $0.13755

Zwischensummenbetrag $0.17366

Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Collector-Emitter Breakdown Voltage：50V
Number of Elements：1
hFEMin：70
Packaging：Tape & Reel (TR)
Published：2011
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Max Operating Temperature：150°C
Min Operating Temperature：-65°C
Voltage - Rated DC：50V
Max Power Dissipation：200mW
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：100mA
Base Part Number：BCR135
Polarity：NPN
Element Configuration：Single
Power Dissipation：200mW
Transistor Application：SWITCHING
Halogen Free：Not Halogen Free
Transistor Type：NPN - Pre-Biased
Collector Emitter Voltage (VCEO)：300mV
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA 5V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：300mV @ 500μA, 10mA
Transition Frequency：150MHz
Max Breakdown Voltage：50V
Frequency - Transition：150MHz
Resistor - Base (R1)：10 k Ω
Resistor - Emitter Base (R2)：47 k Ω
Height：1mm
Length：2.9mm
Width：1.3mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 12397

1+： $0.17366
10+： $0.16383
100+： $0.15456
500+： $0.14581
1000+： $0.13755

Итого $0.17366