Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные MMUN2112LT1G
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MMUN2112LT1G
- ON Semiconductor
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- TO-236-3, SC-59, SOT-23-3
- TRANS PREBIAS PNP 246MW SOT23-3
- Date Sheet
Lagernummer 19067
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time:4 Weeks
- Contact Plating:Tin
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Surface Mount:YES
- Number of Pins:3
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:1
- hFEMin:60
- Packaging:Tape & Reel (TR)
- Published:2001
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT-IN BIAS RESISTOR RATIO 1
- HTS Code:8541.21.00.95
- Voltage - Rated DC:-50V
- Max Power Dissipation:246mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:-100mA
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:MMUN21**L
- Pin Count:3
- Polarity:PNP
- Element Configuration:Single
- Power Dissipation:246mW
- Transistor Application:SWITCHING
- Halogen Free:Halogen Free
- Transistor Type:PNP - Pre-Biased
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA 10V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300μA, 10mA
- Max Breakdown Voltage:50V
- Resistor - Base (R1):22 k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):22 k Ω
- Height:1.01mm
- Length:3.04mm
- Width:1.4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 19067
Итого $0.00000