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H5TQ2G63DFR-RDC
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Hynix
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Неклассифицированные
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- DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：96
- Package Description：TFBGA, BGA96,9X16,32
- Package Style：GRID ARRAY, THIN PROFILE, FINE PITCH
- Number of Words Code：128000000
- Package Body Material：PLASTIC/EPOXY
- Package Equivalence Code：BGA96,9X16,32
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Access Time-Max：0.195 ns
- Operating Temperature-Max：85 °C
- Rohs Code：Yes
- Manufacturer Part Number：H5TQ2G63DFR-RDC
- Clock Frequency-Max (fCLK)：933 MHz
- Number of Words：134217728 words
- Supply Voltage-Nom (Vsup)：1.5 V
- Package Code：TFBGA
- Package Shape：RECTANGULAR
- Manufacturer：SK Hynix Inc
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：SK HYNIX INC
- Risk Rank：5.79
- Part Package Code：BGA
- ECCN Code：EAR99
- Additional Feature：AUTO/SELF REFRESH
- HTS Code：8542.32.00.36
- Subcategory：DRAMs
- Technology：CMOS
- Terminal Position：BOTTOM
- Terminal Form：BALL
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Number of Functions：1
- Terminal Pitch：0.8 mm
- Reach Compliance Code：unknown
- Pin Count：96
- JESD-30 Code：R-PBGA-B96
- Qualification Status：Not Qualified
- Supply Voltage-Max (Vsup)：1.575 V
- Power Supplies：1.5 V
- Temperature Grade：OTHER
- Supply Voltage-Min (Vsup)：1.425 V
- Number of Ports：1
- Operating Mode：SYNCHRONOUS
- Supply Current-Max：0.255 mA
- Organization：128MX16
- Output Characteristics：3-STATE
- Seated Height-Max：1.2 mm
- Memory Width：16
- Standby Current-Max：0.012 A
- Memory Density：2147483648 bit
- I/O Type：COMMON
- Memory IC Type：DDR DRAM
- Refresh Cycles：8192
- Sequential Burst Length：4,8
- Interleaved Burst Length：4,8
- Access Mode：MULTI BANK PAGE BURST
- Self Refresh：YES
- Width：7.5 mm
- Length：13 mm
Со склада 0
Итого $0.00000
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