MT54V512H18EF-10

Name: Micron MT54V512H18EF-10
Brand: Micron
Rating: 4.8 (19 reviews)

Micron
Неклассифицированные
165-TBGA
QDR SRAM, 512KX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Date Sheet

Lagernummer 190

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：165-TBGA
Surface Mount：YES
Supplier Device Package：165-FBGA (13x15)
Number of Terminals：165
Package：Bulk
Base Product Number：MT54V512
Mfr：Micron Technology Inc.
Product Status：Active
Memory Types：Volatile
Package Description：13 X 15 MM, 1 MM PITCH, FBGA-165
Package Style：GRID ARRAY, THIN PROFILE
Number of Words Code：512000
Package Body Material：PLASTIC/EPOXY
Access Time-Max：3 ns
Operating Temperature-Max：70 °C
Manufacturer Part Number：MT54V512H18EF-10
Number of Words：524288 words
Supply Voltage-Nom (Vsup)：2.5 V
Package Code：TBGA
Package Shape：RECTANGULAR
Manufacturer：Rochester Electronics LLC
Part Life Cycle Code：Active
Ihs Manufacturer：ROCHESTER ELECTRONICS LLC
Risk Rank：5.79
Part Package Code：BGA
Operating Temperature：0°C ~ 70°C (TA)
Series：QDR™
JESD-609 Code：e1
Terminal Finish：TIN SILVER COPPER
Additional Feature：PIPELINED ARCHITECTURE
Technology：SRAM - Quad Port, Synchronous
Voltage - Supply：2.4V ~ 2.6V
Terminal Position：BOTTOM
Terminal Form：BALL
Number of Functions：1
Terminal Pitch：1 mm
Reach Compliance Code：unknown
Pin Count：165
JESD-30 Code：R-PBGA-B165
Qualification Status：COMMERCIAL
Supply Voltage-Max (Vsup)：2.6 V
Temperature Grade：COMMERCIAL
Supply Voltage-Min (Vsup)：2.4 V
Memory Size：9Mbit
Operating Mode：SYNCHRONOUS
Clock Frequency：100 MHz
Memory Format：SRAM
Memory Interface：Parallel
Organization：512KX18
Seated Height-Max：1.2 mm
Memory Width：18
Write Cycle Time - Word, Page：-
Memory Density：9437184 bit
Parallel/Serial：PARALLEL
Memory IC Type：QDR SRAM
Memory Organization：512K x 18
Width：13 mm
Length：15 mm

Со склада 190

Итого $0.00000