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K4S281632K-UI75
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：54
- Package Description：TSOP2, TSOP54,.46,32
- Package Style：SMALL OUTLINE, THIN PROFILE
- Moisture Sensitivity Levels：3
- Number of Words Code：8000000
- Package Body Material：PLASTIC/EPOXY
- Package Equivalence Code：TSOP54,.46,32
- Operating Temperature-Min：-40 °C
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Access Time-Max：5.4 ns
- Operating Temperature-Max：85 °C
- Rohs Code：Yes
- Manufacturer Part Number：K4S281632K-UI75
- Clock Frequency-Max (fCLK)：133 MHz
- Number of Words：8388608 words
- Supply Voltage-Nom (Vsup)：3.3 V
- Package Code：TSOP2
- Package Shape：RECTANGULAR
- Manufacturer：Samsung Semiconductor
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：SAMSUNG SEMICONDUCTOR INC
- Risk Rank：5.62
- Pbfree Code：Yes
- Additional Feature：AUTO/SELF REFRESH
- Subcategory：DRAMs
- Technology：CMOS
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Number of Functions：1
- Terminal Pitch：0.8 mm
- Reach Compliance Code：unknown
- JESD-30 Code：R-PDSO-G54
- Qualification Status：Not Qualified
- Supply Voltage-Max (Vsup)：3.6 V
- Power Supplies：3.3 V
- Temperature Grade：INDUSTRIAL
- Supply Voltage-Min (Vsup)：3 V
- Number of Ports：1
- Operating Mode：SYNCHRONOUS
- Supply Current-Max：0.2 mA
- Organization：8MX16
- Output Characteristics：3-STATE
- Seated Height-Max：1.2 mm
- Memory Width：16
- Standby Current-Max：0.002 A
- Memory Density：134217728 bit
- I/O Type：COMMON
- Memory IC Type：SYNCHRONOUS DRAM
- Refresh Cycles：4096
- Sequential Burst Length：1,2,4,8,FP
- Interleaved Burst Length：1,2,4,8
- Access Mode：FOUR BANK PAGE BURST
- Self Refresh：YES
- Width：10.16 mm
- Length：22.22 mm
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