2SC3325-Y(TE85L,F)

Name: Toshiba 2SC3325-Y(TE85L,F)
Brand: Toshiba
Rating: 4.9 (19 reviews)

Toshiba
Дискретные полупроводниковые
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TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
Date Sheet

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Спецификация Часто задаваемые вопросы

Factory Lead Time：16 Weeks
Contact Plating：Copper, Silver, Tin
Mount：Surface Mount
Surface Mount：YES
Number of Pins：3
Number of Terminals：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：50 V
hFEMin：70
Number of Elements：1
RoHS：Compliant
Package Description：SMALL OUTLINE, R-PDSO-G3
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Max：150 °C
Rohs Code：Yes
Transition Frequency-Nom (fT)：300 MHz
Manufacturer Part Number：2SC3325-Y(TE85L,F)
Package Shape：RECTANGULAR
Manufacturer：Toshiba America Electronic Components
Part Life Cycle Code：Active
Ihs Manufacturer：TOSHIBA CORP
Risk Rank：1.96
Part Package Code：SOT-23
Packaging：Tape and Reel
ECCN Code：EAR99
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Subcategory：Other Transistors
Max Power Dissipation：200 mW
Terminal Position：DUAL
Terminal Form：GULL WING
Reach Compliance Code：unknown
Frequency：300 MHz
Pin Count：3
JESD-30 Code：R-PDSO-G3
Qualification Status：Not Qualified
Polarity：NPN
Configuration：SINGLE
Element Configuration：Single
Power Dissipation：200 mW
Transistor Application：SWITCHING
Gain Bandwidth Product：300 MHz
Polarity/Channel Type：NPN
Collector Emitter Voltage (VCEO)：250 mV
Max Collector Current：500 mA
Transition Frequency：300 MHz
Max Breakdown Voltage：50 V
Collector Base Voltage (VCBO)：50 V
Power Dissipation-Max (Abs)：0.2 W
Emitter Base Voltage (VEBO)：5 V
Collector Current-Max (IC)：0.5 A
DC Current Gain-Min (hFE)：40
Collector-Emitter Voltage-Max：50 V
VCEsat-Max：0.25 V
Power Dissipation Ambient-Max：0.2 W

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