Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные IRFF111
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IRFF111
- Harris Corporation
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- TO-205AF Metal Can
- N-CHANNEL POWER MOSFET
- Date Sheet
Lagernummer 208
- 1+: $2.75605
- 10+: $2.60005
- 100+: $2.45288
- 500+: $2.31403
- 1000+: $2.18305
Zwischensummenbetrag $2.75605
Спецификация Часто задаваемые вопросы
- Mounting Type:Through Hole
- Package / Case:TO-205AF Metal Can
- Surface Mount:NO
- Supplier Device Package:TO-205AF (TO-39)
- Number of Terminals:3
- Transistor Element Material:SILICON
- Mfr:Harris Corporation
- Package:Bulk
- Product Status:Active
- Current - Continuous Drain (Id) @ 25℃:3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Power Dissipation (Max):15W (Tc)
- RoHS:Non-Compliant
- Package Style:CYLINDRICAL
- Moisture Sensitivity Levels:NOT SPECIFIED
- Package Body Material:METAL
- Reflow Temperature-Max (s):NOT SPECIFIED
- Rohs Code:No
- Manufacturer Part Number:IRFF111
- Package Shape:ROUND
- Manufacturer:Rochester Electronics LLC
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:ROCHESTER ELECTRONICS LLC
- Risk Rank:5.38
- Drain Current-Max (ID):3.5 A
- Series:-
- Operating Temperature:-55°C ~ 150°C (TJ)
- JESD-609 Code:e0
- Pbfree Code:No
- Terminal Finish:TIN LEAD
- Terminal Position:BOTTOM
- Terminal Form:WIRE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- JESD-30 Code:O-MBCY-W3
- Qualification Status:COMMERCIAL
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:600mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
- Drain to Source Voltage (Vdss):80 V
- Vgs (Max):±20V
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-205AF
- Drain-source On Resistance-Max:0.6 Ω
- Pulsed Drain Current-Max (IDM):14 A
- DS Breakdown Voltage-Min:80 V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:-
Со склада 208
- 1+: $2.75605
- 10+: $2.60005
- 100+: $2.45288
- 500+: $2.31403
- 1000+: $2.18305
Итого $2.75605