SIHB125N60EF-GE3

Name: Vishay Siliconix SIHB125N60EF-GE3
Brand: Vishay Siliconix
Price: 3.4575786 USD
Availability: InStock
Rating: 4.5 (9 reviews)

Vishay Siliconix
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 600V 25A D2PAK
Date Sheet

Lagernummer 3023

1+： $3.45758
10+： $3.26187
100+： $3.07723
500+： $2.90305
1000+： $2.73873

Zwischensummenbetrag $3.45758

Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK (TO-263)
Mfr：Vishay Siliconix
Package：Tube
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：179W (Tc)
Base Product Number：SIHB125
Number of Elements per Chip：1
Package Type：D2PAK (TO-263)
Channel Mode：Enhancement
MSL：MSL 1 - Unlimited
Qualification：-
Continuous Drain Current Id：25A
Vds - Drain-Source Breakdown Voltage：600 V
Vgs th - Gate-Source Threshold Voltage：5 V
Pd - Power Dissipation：179 W
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Minimum Operating Temperature：- 55 C
Mounting Styles：SMD/SMT
Qg - Gate Charge：31 nC
Rds On - Drain-Source Resistance：125 mOhms
Id - Continuous Drain Current：25 A
Series：EF
Operating Temperature：-55°C ~ 150°C (TJ)
Pin Count：3
Number of Channels：1 Channel
Power Dissipation：179W
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1533 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±30V
Channel Type：N
FET Feature：-

Со склада 3023

1+： $3.45758
10+： $3.26187
100+： $3.07723
500+： $2.90305
1000+： $2.73873

Итого $3.45758