TK33S10N1L,LQ

Name: Toshiba Semiconductor and Storage TK33S10N1L,LQ
Brand: Toshiba Semiconductor and Storage
Rating: 4.5 (16 reviews)

Toshiba Semiconductor and Storage
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 100V 33A DPAK
Date Sheet

Lagernummer 644

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package：DPAK+
Mfr：Toshiba Semiconductor and Storage
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：33A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Power Dissipation (Max)：125W (Tc)
Base Product Number：TK33S10
Vds - Drain-Source Breakdown Voltage：100 V
Typical Turn-On Delay Time：19 ns
Vgs th - Gate-Source Threshold Voltage：1.5 V
Qualification：AEC-Q101
Pd - Power Dissipation：125 W
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 175 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Unit Weight：0.012699 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：2000
Mounting Styles：SMD/SMT
Channel Mode：Enhancement
Manufacturer：Toshiba
Brand：Toshiba
Qg - Gate Charge：33 nC
Tradename：U-MOSVIII-H
Rds On - Drain-Source Resistance：9.7 mOhms
RoHS：Details
Typical Turn-Off Delay Time：55 ns
Id - Continuous Drain Current：33 A
Series：U-MOSVIII-H
Operating Temperature：175°C
Packaging：MouseReel
Subcategory：MOSFETs
Configuration：Single
Number of Channels：1 Channel
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：9.7mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Rise Time：8 ns
Drain to Source Voltage (Vdss)：100 V
Vgs (Max)：±20V
Product Type：MOSFET
Transistor Type：1 N-Channel
FET Feature：-
Product Category：MOSFET

Со склада 644

Итого $0.00000