IPB330P10NMATMA1

Name: Infineon Technologies IPB330P10NMATMA1
Brand: Infineon Technologies
Rating: 4.7 (11 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TRENCH >=100V PG-TO263-3
Date Sheet

Lagernummer 3627

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Base Product Number：IPB330P
Power Dissipation (Max)：3.8W (Ta), 300W (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：6.9A (Ta), 62A (Tc)
Product Status：Active
Mfr：Infineon Technologies
Number of Elements per Chip：1
Package Type：D2PAK (TO-263)
MSL：MSL 1 - Unlimited
Qualification：-
Continuous Drain Current Id：62A
Vds - Drain-Source Breakdown Voltage：100 V
Vgs th - Gate-Source Threshold Voltage：4 V
Pd - Power Dissipation：300 W
Transistor Polarity：P-Channel
Maximum Operating Temperature：+ 175 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：1000
Mounting Styles：SMD/SMT
Channel Mode：Enhancement
Part # Aliases：IPB330P10NM SP005343858
Manufacturer：Infineon
Brand：Infineon Technologies
Qg - Gate Charge：189 nC
Rds On - Drain-Source Resistance：33 mOhms
RoHS：Details
Id - Continuous Drain Current：62 A
Operating Temperature：-55°C ~ 175°C (TJ)
Packaging：Cut Tape
Subcategory：MOSFETs
Pin Count：3
Number of Channels：1 Channel
Power Dissipation：300W
FET Type：P-Channel
Rds On (Max) @ Id, Vgs：33mOhm @ 53A, 10V
Vgs(th) (Max) @ Id：4V @ 5.55mA
Input Capacitance (Ciss) (Max) @ Vds：11000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs：236 nC @ 10 V
Drain to Source Voltage (Vdss)：100 V
Vgs (Max)：±20V
Product Type：MOSFET
Channel Type：P
FET Feature：-
Product：MOSFET
Product Category：MOSFET

Со склада 3627

Итого $0.00000