BSC200P03LSG

Name: Infineon BSC200P03LSG
Brand: Infineon
Price: 0.4186944 USD
Availability: InStock
Rating: 4.9 (17 reviews)

Infineon
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-PowerTDFN
Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Date Sheet

Lagernummer 7815

1+： $0.41869
10+： $0.39499
100+： $0.37264
500+： $0.35154
1000+： $0.33165

Zwischensummenbetrag $0.41869

Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Surface Mount：YES
Supplier Device Package：PG-TDSON-8-6
Number of Terminals：5
Transistor Element Material：SILICON
Continuous Drain Current Id：9.9
Operating Temperature-Max：175 °C
Rohs Code：Yes
Manufacturer Part Number：BSC200P03LSG
Package Shape：RECTANGULAR
Manufacturer：Infineon Technologies AG
Number of Elements：1
Part Life Cycle Code：Obsolete
Ihs Manufacturer：INFINEON TECHNOLOGIES AG
Risk Rank：5.82
Drain Current-Max (ID)：9.9 A
Product Status：Active
Power Dissipation (Max)：2.5W (Ta), 63W (Tc)
Mfr：Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：9.9A (Ta), 12.5A (Tc)
Package：Bulk
Package Description：GREEN, PLASTIC, TDSON-8
Package Style：SMALL OUTLINE
Moisture Sensitivity Levels：1
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：40
Series：OptiMOS®
Operating Temperature：-55°C ~ 150°C (TJ)
JESD-609 Code：e3
ECCN Code：EAR99
Terminal Finish：MATTE TIN
Additional Feature：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory：Other Transistors
Technology：MOSFET (Metal Oxide)
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：compliant
Pin Count：8
JESD-30 Code：R-PDSO-F5
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id：1V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds：2430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs：48.5 nC @ 10 V
Drain to Source Voltage (Vdss)：30 V
Vgs (Max)：±25V
Polarity/Channel Type：P-CHANNEL
Drain Current-Max (Abs) (ID)：12.5 A
Drain-source On Resistance-Max：0.02 Ω
Pulsed Drain Current-Max (IDM)：50 A
DS Breakdown Voltage-Min：30 V
Channel Type：P
Avalanche Energy Rating (Eas)：98 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：63 W
FET Feature：-

Со склада 7815

1+： $0.41869
10+： $0.39499
100+： $0.37264
500+： $0.35154
1000+： $0.33165

Итого $0.41869