IPI22N03S4L-15

Name: Infineon IPI22N03S4L-15
Brand: Infineon
Rating: 5 (18 reviews)

Infineon
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Field-Effect Transistor, 22A I(D), 30V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Date Sheet

Lagernummer 18397

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I²Pak, TO-262AA
Surface Mount：NO
Supplier Device Package：PG-TO262-3-1
Number of Terminals：3
Transistor Element Material：SILICON
Product Status：Active
Power Dissipation (Max)：31W (Tc)
Mfr：Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Current - Continuous Drain (Id) @ 25℃：22A (Tc)
Package：Bulk
Package Description：GREEN, PLASTIC, TO-262, 3 PIN
Package Style：IN-LINE
Moisture Sensitivity Levels：NOT SPECIFIED
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Manufacturer Part Number：IPI22N03S4L-15
Package Shape：RECTANGULAR
Manufacturer：Rochester Electronics LLC
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：ROCHESTER ELECTRONICS LLC
Risk Rank：5.38
Part Package Code：TO-262AA
Drain Current-Max (ID)：22 A
Series：*
Operating Temperature：-55°C ~ 175°C (TJ)
Pbfree Code：Yes
Terminal Finish：NOT SPECIFIED
Additional Feature：ULTRA LOW RESISTANCE
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
Pin Count：3
JESD-30 Code：R-PSIP-T3
Qualification Status：COMMERCIAL
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：14.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：2.2V @ 10µA
Input Capacitance (Ciss) (Max) @ Vds：980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Drain to Source Voltage (Vdss)：30 V
Vgs (Max)：±16V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-262AA
Drain-source On Resistance-Max：0.0149 Ω
Pulsed Drain Current-Max (IDM)：88 A
DS Breakdown Voltage-Min：30 V
Avalanche Energy Rating (Eas)：20 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

Со склада 18397

Итого $0.00000